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| 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/C C C ABSOLUTE MAXIMUM RATINGS (TA=25C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25C TC=25C Derate above 25C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 60 60 5.0 3.0 1.75 30 0.24 +150 -55 to +150 Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100A, I E =0 Collector-Emitter Breakdown Voltage IC=1mA, I B =0 Emitter-Base Breakdown Voltage IE=100A, I C =0 Collector Cut-Off Current VCB=60V, I E=0 Emitter-Cut-Off Current VEB=60V,IE=0 Emitter-Cut-Off Current VEB=4.0V, IC =0 Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO Min 60 60 5.0 Max Max 100 1.0 100 Unit V V V A mA A WEITRON http://www.weitron.com.tw 1/4 06-Feb-07 2SD313 ELECTRICAL CHARACTERISTICS (TA=25C Unless otherwise noted) Characteristic ON CHARACTERISTICS DC Current Gain VCE= 2V, IC= 1A VCE= 2V, IC= 0.1A Collector-Emitter Saturation Voltage IC= 2A, IB = 200mA Base-Emitter On Voltage VCE= 2V, I C = 1A Transition Frequency VCE= 5V, IC= 500mA Transition Frequency VCB= 10V, I E= 0 , f=1MHz hFE1 hFE2 VCE(sat) VBE fT Cob 40 40 8 65 320 1.0 1.5 V V MHz pF Symbol Min Typ Max Unit CLASSIFICATION OF hFE(1) Rank Range C 40-80 D 60-120 E 100-200 F 160-320 WEITRON http://www.weitron.com.tw 2/4 06-Feb-07 2SD313 Sa tu ration Vol ta ge, VCE (S AT) (mV) 1000 10000 IC=10IB 1000 100 h FE 10 100 1 10 100 1000 10000 10 10 100 1000 10000 Fig.1 DC Current Gain 10000 IC=10IB Collector Current (mA) Fig.2 Saturation Voltage vs Collector Current 10 Collector Current (mA) 1000 Collecto r Current (A) 10 100 1000 10000 VBE (S AT) (mA) 1 100 Collector Current (mA) 0.1 1 10 Collector to Emitter Voltage (V) 100 Fig.3 VBE(sat) vs IC 10000 Fig.4 SOA VCE=2V VB E(ON) (mV) 1000 100 10 100 1000 10000 Collector Current (mA) Fig.5 VBE(on) vs IC WEITRON http://www.weitron.com.tw 3/4 06-Feb-07 2SD313 TO-220 Outline Dimensions unit:mm D F C1 A H E1 E B1 B L1 A1 G G1 C Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 TO-220 Min Max 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 L WEITRON http://www.weitron.com.tw 4/4 06-Feb-07 |
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